MCMA650MT1400NKD 1~ triac thyristor module 3 2 5 4 part number MCMA650MT1400NKD backside: isolated - negative half cycle positive half cycle + qii qi qiii qiv i gt - + i gt three q u a dr a nt s o p e r a tion note: all polarities are referenced to t1 t2 t1 ref (-) i gt t2 t1 ref (-) i gt t2 t1 ref (+) i gt tav t v v 1.02 rrm 300 1400 = v = v i = a features / advantages: applications: package: triac for line frequency three quadrants operation - qi - qiii planar passivated chip long-term stability of blocking currents and voltages line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control y1 industry standard outline rohs compliant soldering pins for pcb mounting base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCMA650MT1400NKD v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.09 r 0.12 k/w min. 300 v v 1 t = 25c vj t = c vj ma 40 v = v t = 25c vj i = a t v t = c c 85 p tot 960 w t = 25c c 300 1400 forward voltage drop total power dissipation conditions unit 1.26 t = 25c vj 125 v t0 v 0.81 t = c vj 140 r t 0.68 m ? v 1.02 t = c vj i = a t v 300 1.23 i = a 600 i = a 600 threshold voltage slope resistance for power loss calculation only ma 125 v v 1400 t = 25c vj i a 650 p gm w t = 30 s 120 max. gate power dissipation p t = c c 140 w t = 60 p p gav w 20 average gate power dissipation c j 438 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 140 i2t t = 45c value for fusing t = c 140 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 140 9.60 10.4 332.9 323.3 ka ka ka ka 8.16 8.82 460.8 447.4 1400 300 s rms forward current per phase rms tav 180 sine average forward current (di/dt) cr a/s 100 repetitive, i = t vj = 140 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 140c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 900 a t pg = 1 di /dt a/s; g = 1 drm cr v = ? v drm gk 1000 2 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 220 ma t = c -40 vj 3 v 400 ma v gd gate non-trigger voltage t = c vj 0.25 v i gd gate non-trigger current 10 ma v = ? v d drm 140 latching current t = c vj 200 ma i l 25 t s p = 30 i a; g = 1 di /dt a/s g = 1 holding current t = c vj 150 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 1 di /dt a/s g = 1 v = ? v d drm turn-off time t = c vj 350 s t q di/dt = a/s 10 dv/dt = v/s 50 v = r 100 v; i a; t = 300 v = ? v drm t s p = 200 non-repet., i = 300 a t 125 r thch 0.040 thermal resistance case to heatsink k/w rectifier 1500 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCMA650MT1400NKD ratings part number yywwaa date code (dc) production index (pi) lot.no: xxxxxx data matrix: part no. (1-19), dc + pi (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) circuit c m m a 650 mt 1400 n kd part description thyristor (scr) thyristor (up to 1800v) 1~ triac three quadrants operation: qi - qiii y1-2-cu module = = = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 7 mounting torque 4.5 t vj c 140 virtual junction temperature -40 weight g 650 symbol definition typ. max. min. conditions operation temperature unit m t nm 13 terminal torque 11 v v t = 1 second v t = 1 minute isolation voltage mm mm 16.0 25.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 600 a per terminal 125 -40 terminal to terminal y1 similar part package voltage class mcma650mt1800nkd y1-2-cu 1800 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MCMA650MT1400NKD 518703 box 3 MCMA650MT1400NKD standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.81 m ? v 0 max r 0 max slope resistance * 0.5 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 140 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCMA650MT1400NKD 2 3 6.2 80 92 22.5 35 28.5 38 50 4 5 6 7 43 49 5 optional accessories for modules keyed gate/cathode twin plugs with wire length = 35 0 mm, gate = white, cathode = red type zy 180l (l = left for pin pair 4/5) type zy 180r (r = right for pin pair 6/7) ul 758, style 3751 52 +0 -1,4 10 2.8 x 0.8 45 15 1 2x m8 3 2 5 4 outlines y1 ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MCMA650MT1400NKD 0 40 80 120 160 0 100 200 300 400 500 600 700 0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 0.01 0.1 1 4000 5000 6000 7000 80 0 0 0.4 0.6 0.8 1.0 1.2 1.4 0 200 400 600 8 00 1 10 100 1000 10000 0.00 0.01 0.02 0.03 0.04 0.05 0.06 i t [a] t [s] v t [v] 2 3 4 5 6 7 8 9 01 1 10 4 10 5 10 6 i 2 t [a 2 s] t [ms] i tsm [a] t vj = 25c t vj = 45c 50 hz, 80% v rrm t vj = 45c v r = 0 v i tavm [a] t case [c] z thjc [k/w] t [ms] fig. 1 forward characteristics fig. 2 surge overload current i tsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 s) fig. 4 gate voltage & gate current fig. 6 max. forward current at case temperature fig. 8 transient thermal impedance junction to case t gd [s] i g [a] lim. typ. fig. 5 gate controlled delay time t gd 0 100 200 300 400 0 100 200 300 400 i t(av) [a] p tot [w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 20 40 60 80 100 120 140 t amb [c] t vj = 125c dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 10 0 10 1 10 2 10 3 10 4 10 5 0.1 1 10 v g [v] i g [ma] t vj = 140c t vj = 140c t vj = 125c 140c i r thi (k/w) t i (s) 1 0.0020 0.0150 2 0.0080 0.0800 3 0.0130 0.2200 4 0.0370 0.3800 r thha 0.05 0.10 0.20 0.30 0.40 0.50 6 5 4 3 1 2 4: p gm = 20 w 5: p gm = 60 w 6: p gm = 120 w i gd, t vj = 140c 1: i gt (t vj = 125c) 2: i gt (t vj = 25c) 3: i gt (t vj = -40c) thyristor ixys reserves the right to change limits, condition s and dimensions. 20170116e data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
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